Direct Growth of Patterned Ge on Insulators Using Graphene-Reference-Cited by-同舟云学术

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Direct Growth of Patterned Ge on Insulators Using Graphene

Published:2021-06-18 Issue:25 Volume:125 Page:14117-14121
ISSN:1932-7447
Container-title:The Journal of Physical Chemistry C
language:en
Short-container-title:J. Phys. Chem. C

Author:

Tsukamoto Takahiro¹^ORCID,Hirose Nobumitsu²,Kasamatsu Akifumi²,Matsui Toshiaki²,Suda Yoshiyuki³

Affiliation:

1. The University of Electro-Communications, 1-5-1 Chofugaoka, Chofu, Tokyo 182-8585, Japan

2. National Institute of Information and Communications Technology, 4-2-1 Nukui-Kitamachi, Koganei, Tokyo 184-8795, Japan

3. Tokyo University of Agriculture and Technology, 2-24-16 Naka-cho, Koganei, Tokyo 184-8588, Japan

Funder

Nippon Sheet Glass Foundation for Materials Science and Engineering

Publisher

American Chemical Society (ACS)

Subject

Surfaces, Coatings and Films,Physical and Theoretical Chemistry,General Energy,Electronic, Optical and Magnetic Materials

Link

https://pubs.acs.org/doi/pdf/10.1021/acs.jpcc.1c03567

Reference42 articles.

1. Electric Field Effect in Atomically Thin Carbon Films

2. Two-dimensional gas of massless Dirac fermions in graphene

3. Experimental observation of the quantum Hall effect and Berry's phase in graphene

4. The rise of graphene

5. Superior Thermal Conductivity of Single-Layer Graphene

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Microstructure and Ferromagnetism of Mn_0.05Ge_0.95 Quantum Dots/Graphene Heterostructures for Spintronic Devices;ACS Applied Nano Materials;2024-07-17

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