Si substrate preparation for GaAs/Si by metalorganic chemical vapor deposition
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference19 articles.
1. Growth of Single Domain GaAs Layer on (100)-Oriented Si Substrate by MOCVD
2. Epitaxial growth and material properties of GaAs on Si grown by MOCVD
3. Material properties of high‐quality GaAs epitaxial layers grown on Si substrates
4. High resolution electron microscopy of misfit dislocations in the GaAs/Si epitaxial interface
5. Initial Stage and Domain Structure of GaAs Grown on Si(100) by Molecular Beam Epitaxy
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1. Initial domain structure of GaAs thin films grown on Si(001) substrates;Applied Surface Science;1997-06
2. Initial domain structure of hydride vapor phase epitaxy GaAs/Si(001) by using x‐ray standing waves;Applied Physics Letters;1996-04
3. Low-Temperature Metalorganic Chemical Vapor Deposition of GaAs on Si by Alternate Gas Flow of the Source Materials;Japanese Journal of Applied Physics;1992-02-15
4. AsH3preflow effects on initial stages of GaAs grown on Si by metalorganic chemical vapor deposition;Applied Physics Letters;1991-12-23
5. The Effects of AsH3Preflow Conditions at Low Temperature on the Morphology of GaAs Buffer Layers for GaAs/Si Grown by Metalorganic Chemical Vapor Deposition;Japanese Journal of Applied Physics;1991-11-15
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