AsH3preflow effects on initial stages of GaAs grown on Si by metalorganic chemical vapor deposition
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.105677
Reference14 articles.
1. Growth of Single Domain GaAs Layer on (100)-Oriented Si Substrate by MOCVD
2. Epitaxial growth and material properties of GaAs on Si grown by MOCVD
3. Material properties of high‐quality GaAs epitaxial layers grown on Si substrates
4. Formation of the interface between GaAs and Si: Implications for GaAs‐on‐Si heteroepitaxy
5. Nucleation of GaAs on Si: Experimental evidence for a three‐dimensional critical transition
Cited by 6 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Photo- and electroreflectance of cubic boron phosphide;Journal of Applied Physics;1998-02
2. Electrolyte Electroreflectance of Boron Phosphide (BP);MRS Proceedings;1996
3. Initial stages of organometallic-vapour-phase epitaxial AIGaAs grown on (001) Si;Journal of Materials Science: Materials in Electronics;1994-10
4. Multiple twinning in GaAs epitaxial layers grown on Si(001) and Si(111);Journal of Applied Physics;1994-04
5. Continuous GaAs Film Growth on Epitaxial Si Surface in Initial Stage of GaAs/Si Heteroepitaxy;Japanese Journal of Applied Physics;1993-09-01
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