Continuous GaAs Film Growth on Epitaxial Si Surface in Initial Stage of GaAs/Si Heteroepitaxy-Reference-Cited by-同舟云学术

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Continuous GaAs Film Growth on Epitaxial Si Surface in Initial Stage of GaAs/Si Heteroepitaxy

Published:1993-09-01 Issue:Part 2, No. 9A Volume:32 Page:L1252-L1255
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Tachikawa Masami,Mori Hidefumi,Sugo Mitsuru,Itoh Yoshio

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Cited by 17 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Review of Highly Mismatched III-V Heteroepitaxy Growth on (001) Silicon;Nanomaterials;2022-02-22

2. Optimization design for high-quality factor 1.3 μm InAs/InGaAs quantum dot square microcavity lasers on silicon with output waveguide structures;Applied Physics A;2019-08

3. Double GaAs/Si Heterojunction Layers in Si Solar Cells Fabricated by Electron Beam Evaporation;Journal of Nanoscience and Nanotechnology;2019-03-01

4. Growth of III–V semiconductors and lasers on silicon substrates by MOCVD;Future Directions in Silicon Photonics;2019

5. Influences of ultrathin amorphous buffer layers on GaAs/Si grown by metal–organic chemical vapor deposition;Applied Physics A;2018-03-12

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