Double GaAs/Si Heterojunction Layers in Si Solar Cells Fabricated by Electron Beam Evaporation-Reference-Cited by-同舟云学术

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Double GaAs/Si Heterojunction Layers in Si Solar Cells Fabricated by Electron Beam Evaporation

Published:2019-03-01 Issue:3 Volume:19 Page:1368-1375
ISSN:1533-4880
Container-title:Journal of Nanoscience and Nanotechnology
language:en
Short-container-title:j nanosci nanotechnol

Author:

Palei Srikanta¹,Parida Bhaskar²,Sahu Rajkumar¹,Mun Jonghun¹,Kim Keunjoo¹

Affiliation:

1. Department of Mechanical Engineering and Research Center of Industrial Technology, Chonbuk National University, Jeonju 54896, South Korea

2. School of Semiconductor and Chemical Engineering, Semiconductor Physics Research Center, Chonbuk National University, Jeonju 54896, R. O. Korea

Publisher

American Scientific Publishers

Subject

Condensed Matter Physics,General Materials Science,Biomedical Engineering,General Chemistry,Bioengineering

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Design and simulation analysis of narrow bandgap single-junction GaAs-GaAsSb nanowire solar cell;Fifth International Conference on Optoelectronic Science and Materials (ICOSM 2023);2024-02-01

2. Influence of anti-reflection coatings on double GaAs/Si heterojunction layers in Si solar cells;Semiconductor Science and Technology;2022-12-05

3. A Special Issue on 2D and 1D Materials: Trends in Low Dimensions for Nanoelectronics and Energy Applications;Journal of Nanoelectronics and Optoelectronics;2019-10-01

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