Atomic layer epitaxy of AlxGa1−xAs and device quality GaAs-Reference-Cited by-同舟云学术

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Atomic layer epitaxy of AlxGa1−xAs and device quality GaAs

Published:1991-01 Issue:1-4 Volume:107 Page:83-88
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Gong J.R.,Colter P.C.,Jung D.,Hussien S.A.,Parker C.A.,Dip A.,Hyuga F.,Duncan W.M.,Bedair S.M.

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference11 articles.

1. Growth of GaAs and AlAs thin films by a new atomic layer epitaxy technique

2. GaAs/AlGaAs quantum well lasers with active regions grown by atomic layer epitaxy

3. Molecular stream epitaxy of ultrathin InGaAs/GaAsP superlattices

4. GaAs growth by atomic layer epitaxy using diethylgalliumchloride

5. Self‐limiting mechanism in the atomic layer epitaxy of GaAs

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1. Synthesis of Doped, Ternary, and Quaternary Materials by Atomic Layer Deposition: A Review;Chemistry of Materials;2018-12-10

2. Crystallinity of inorganic films grown by atomic layer deposition: Overview and general trends;Journal of Applied Physics;2013-01-14

3. Surface chemistry of atomic layer deposition: A case study for the trimethylaluminum/water process;Journal of Applied Physics;2005-06-15

4. Influence of AlN/GaN strained multi-layers on the threading dislocations in GaN films grown by alternate supply of metalorganics and NH3;Materials Science and Engineering: B;2002-06

5. Atomic layer deposition;Handbook of Thin Films;2002

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