Molecular stream epitaxy of ultrathin InGaAs/GaAsP superlattices
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.98388
Reference9 articles.
1. GaInAs(P)/InP quantum well structures grown by gas source molecular beam epitaxy
2. Chemical beam epitaxy of InP and GaAs
3. Device quality AlGaAs/GaAs heterostructures grown in a multichamber organometallic vapor phase epitaxial apparatus
4. A new GaAsP—InGaAs strained-layer super-lattice light-emitting diode
5. Lifetime test for high-current-injection strained-layer superlattice light-emitting diode
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1. In[sub 0.18]Ga[sub 0.82]As/GaAs[sub 1−y]P[sub y] quantum wells grown on (n11)A GaAs substrates by molecular beam epitaxy;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;2000
2. Superlattice Structures;Organometallic Vapor-Phase Epitaxy;1999
3. Growth and characterization of In-based nitride compounds;Journal of Crystal Growth;1997-06
4. New Buffer Layers for GaN on Sapphire by Atomic Layer and Molecular Stream Epitaxy;MRS Proceedings;1995
5. Recent advances in atomic layer epitaxy devices;Applied Surface Science;1994-12
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