Influence of AlN/GaN strained multi-layers on the threading dislocations in GaN films grown by alternate supply of metalorganics and NH3-Reference-Cited by-同舟云学术

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Influence of AlN/GaN strained multi-layers on the threading dislocations in GaN films grown by alternate supply of metalorganics and NH3

Published:2002-06 Issue:2-3 Volume:94 Page:155-158
ISSN:0921-5107
Container-title:Materials Science and Engineering: B
language:en
Short-container-title:Materials Science and Engineering: B

Author:

Gong Jyh-Rong,Yeh Cheng-Long,Tsai Yu-Li,Wang Cheng-Liang,Lin Tai-Yuan,Lan Wen-How,Shiang Yuh-Der,Cherng Ya-Tung

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference16 articles.

1. High dislocation densities in high efficiency GaN‐based light‐emitting diodes

2. GaN thin films deposited via organometallic vapor phase epitaxy on α(6H)–SiC(0001) using high‐temperature monocrystalline AlN buffer layers

3. Lateral epitaxy of low defect density GaN layers via organometallic vapor phase epitaxy

4. Improvement of electrical property and surface morphology of GaN grown by RF-plasma assisted molecular beam epitaxy by introduction of multiple AlN intermediate layer

5. High quality GaN grown on Si(111) by gas source molecular beam epitaxy with ammonia

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1. Inhomogeneity-mediated systematic reduction of the Schottky barrier in a Au/GaN nanorod film interface;Semiconductor Science and Technology;2020-11-25

2. AlN/GaN superlattice quality improvement by using multiple superlattice structure;physica status solidi (c);2008-05

3. On the optical properties and microstructures of GaN films inserted with low-temperature Al0.8Ga0.2N interlayers;Journal of Crystal Growth;2005-04

4. Influence of low-temperature AlGaN intermediate multilayer structures on the growth mode and properties of GaN;Optical Materials;2004-12

5. Improvement in optical properties and surface morphologies of GaN films using low-temperature GaN interlayers;Journal of Crystal Growth;2004-03

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