Improvement in optical properties and surface morphologies of GaN films using low-temperature GaN interlayers
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference15 articles.
1. Intersubband absorption at λ∼1.55 μm in well- and modulation-doped GaN/AlGaN multiple quantum wells with superlattice barriers
2. An insulator-lined silicon substrate-via technology with high aspect ratio
3. AlGaN/GaN high electron mobility transistors on Si(111) substrates
4. Lateral epitaxy of low defect density GaN layers via organometallic vapor phase epitaxy
5. Reduction of threading dislocation density in GaN using an intermediate temperature interlayer
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2. Correlations of a High-temperature AlN Buffer Layer and Al-Preseeding with the Structural and the Optical Properties of GaN on a Si(111) Substrate;Journal of the Korean Physical Society;2011-05-13
3. Improvement of structural and luminescence properties in InGaN/GaN multiple quantum wells by symmetrical thin low temperature-GaN layers;Journal of Crystal Growth;2011-03
4. The Effects of HT Al-preseeding and HT AlN Buffer Layer on Structural and Optical Properties of GaN Grown on Si(111) Substrates;AIP Conference Proceedings;2011
5. The effect of SixNy interlayer on the quality of GaN epitaxial layers grown on Si(111) substrates by MOCVD;Current Applied Physics;2009-03
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