Improvement of structural and luminescence properties in InGaN/GaN multiple quantum wells by symmetrical thin low temperature-GaN layers-Reference-Cited by-同舟云学术

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Improvement of structural and luminescence properties in InGaN/GaN multiple quantum wells by symmetrical thin low temperature-GaN layers

Published:2011-03 Issue:1 Volume:318 Page:509-512
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Tao Y.B.,Chen Z.Z.,Yu T.J.,Yin Y.,Kang X.N.,Yang Z.J.,Ran G.Z.,Zhang G.Y.

Funder

Natural Science Foundation of China

National key Basic Research Special Foundation of China

National High-tech Research and Development Program in China

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference17 articles.

1. Performance of high-power III-nitride light emitting diodes

2. Effects of barrier growth temperature ramp-up time on the photoluminescence of InGaN∕GaN quantum wells

3. GaN-InGaN Quantum Well and LED Structures Grown in a Close Coupled Showerhead (CCS) MOCVD Reactor

4. Optimization of InGaN/GaN multiple quantum well layers by a two-step varied-barrier-growth temperature method

5. InGaN/GaN quantum wells with low growth temperature GaN cap layers

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2. Influence of GaN buffer layer under InGaN/GaN MQWs on luminescent properties;Journal of Crystal Growth;2019-02

3. Effect of hydrogen treatment temperature on the properties of InGaN/GaN multiple quantum wells;Nanoscale Research Letters;2017-05-02

4. Understanding of surface pit formation mechanism of GaN grown in MOCVD based on local thermodynamic equilibrium assumption;Chinese Physics B;2016-06

5. Investigation on the Properties of Nonpolar m-Plane GaN-Based Light-Emitting Diode Wafers Grown on LiGaO2(100) Substrates;Journal of Electronic Materials;2015-03-06

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