InGaN/GaN quantum wells with low growth temperature GaN cap layers
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference15 articles.
1. The Blue Laser Diode: The Complete Story;Nakamura,2000
2. Wide-bandgap semiconductor ultraviolet photodetectors
3. III–V Nitrides: A New Age for Optoelectronics
4. Wide-gap semiconductor InGaN and InGaAln grown by MOVPE
5. Effects of barrier growth temperature ramp-up time on the photoluminescence of InGaN∕GaN quantum wells
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