The effect of SixNy interlayer on the quality of GaN epitaxial layers grown on Si(111) substrates by MOCVD
Author:
Publisher
Elsevier BV
Subject
General Physics and Astronomy,General Materials Science
Reference31 articles.
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4. A low-temperature AlN interlayer to improve the quality of GaN epitaxial films grown on Si substrates;CrystEngComm;2016
5. Origin of surface defects and influence of an in situ deposited SiN nanomask on the properties of strained AlGaN/GaN heterostructures grown on Si(111) using metal–organic vapour phase epitaxy;CrystEngComm;2016
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