Strain induced 2D–3D growth mode transition in molecular beam epitaxy of InxGa1t-xAs on GaAs (001)
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference32 articles.
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2. Properties of InxGa1−xAs‐GaAs strained‐layer quantum‐well‐heterostructure injection lasers
3. InGaAs/GaAs strained quantum wells with a 1.3 μm band edge at room temperature
4. InGaAs/AlGaAs strained single quantum well diode lasers with extremely low threshold current density and high efficiency
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