MOVPE growth of uniform AlGaAs and InGaAs using organoarsine with inverted-horizontal atmospheric-pressure reactor
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference17 articles.
1. Epitaxial growth of high‐mobility GaAs using tertiarybutylarsine and triethylgallium
2. The growth of GaAs, AlGaAs, and selectively doped AlGaAs/GaAs heterostructures by metalorganic vapor phase epitaxy using tertiarybutylarsine
3. MOVPE Growth of Selectively Doped AlGaAs/GaAs Heterostructures with Tertiarybutylarsine
4. Epitaxial growth ofn+‐nGaAs metal‐semiconductor field‐effect transistor structures using tertiarybutylarsine
5. High quality long‐wavelength lasers grown by atmospheric organometallic vapor phase epitaxy using tertiarybutylarsine
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1. Epitaxial film growth and characterization;Thin Films;2001
2. Specific Materials;Organometallic Vapor-Phase Epitaxy;1999
3. MOVPE growth of III–V compounds for optoelectronic and electronic applications;Microelectronics Journal;1996-07
4. Drastic effects of hydrogen flow rate on growth characteristics and electrical/optical properties of InP grown by organometallic vapour phase epitaxy with TMIn and TBP;Journal of Crystal Growth;1995-01
5. GaAs substrate pretreatment and metalorganic vapour phase epitaxy of GaAs, AlAs and (AlGa) As using β-eliminating trialkyl-As precursors;Journal of Crystal Growth;1994-12
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