High carbon doping of AlxGa1−xAs (O ≤x ≤ 1) by atomic layer epitaxy for device applications
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference18 articles.
1. Secondary ion mass spectroscopy depth profiles of heterojunction bipolar transistor emitter-base heterojunctions grown by low pressure OMVPE
2. Abruptp‐type doping profile of carbon atomic layer doped GaAs grown by flow‐rate modulation epitaxy
3. A comparative study of Ga(CH3)3 and Ga(C2H5)3 in the mombe of GaAs
4. Carbon doping in molecular beam epitaxy of GaAs from a heated graphite filament
5. Quantitative analysis of carbon concentration in MOMBEp‐GaAs by low‐temperature photoluminescence
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1. Superlattice Structures;Organometallic Vapor-Phase Epitaxy;1999
2. Role of Surface Chemistry in Semiconductor Thin Film Processing;Chemical Reviews;1996-01-01
3. Recent advances in atomic layer epitaxy devices;Applied Surface Science;1994-12
4. Hydrogen Passivation of Carbon Acceptors in AlAs Grown by Atomic Layer Epitaxy;Japanese Journal of Applied Physics;1994-02-01
5. AlGaAs/GaInP heterojunction tunnel diode for cascade solar cell application;Journal of Applied Physics;1993-08
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