InGaAs/InP quantum wires selectively grown by chemical beam epitaxy
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference14 articles.
1. Optically detected carrier confinement to one and zero dimension in GaAs quantum well wires and boxes
2. Lateral quantization induced emission energy shift of buried GaAs/AlGaAs quantum wires
3. Clear energy level shift in ultranarrow InGaAs/InP quantum well wires fabricated by reverse mesa chemical etching
4. GaInAs/InP selective area metalorganic vapor phase epitaxy for one‐step‐grown buried low‐dimensional structures
5. Insituburied GaInAs/InP quantum dot arrays by selective area metalorganic vapor phase epitaxy
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1. Vertical barrier layer formation during selective MBE growth of InGaAs ridge quantum wires on InP patterned substrates;Physica E: Low-dimensional Systems and Nanostructures;2000-05
2. A theoretical investigation of field induced switching in a disordered electron wave coupler;Journal of Applied Physics;1999-01
3. Maskless selective growth of InGaAs/InP quantum wires on (100) GaAs;Applied Physics Letters;1997-05-26
4. Selective area growth of AlGaAs on GaAs by PSE/MBE;Journal of Crystal Growth;1997-04
5. SELECTIVELY REGROWN CARBON-DOPED (AL)GAAS BY CHEMICAL BEAM EPITAXY WITH NOVEL GAS SOURCES;J CRYST GROWTH;1995
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