Maskless selective growth of InGaAs/InP quantum wires on (100) GaAs-Reference-Cited by-同舟云学术

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Maskless selective growth of InGaAs/InP quantum wires on (100) GaAs

Published:1997-05-26 Issue:21 Volume:70 Page:2828-2830
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Ahopelto J.,Sopanen M.,Lipsanen H.,Lourdudoss S.,Rodriguez Messmer E.,Höfling E.,Reithmaier J. P.,Forchel A.,Petersson A.,Samuelson L.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.119015

Reference10 articles.

1. Carrier capture and quantum confinement in GaAs/AlGaAs quantum wire lasers grown on V‐grooved substrates

2. Formation of GaAs ridge quantum wire structures by molecular beam epitaxy on patterned substrates

3. Lateral subband transitions in the luminescence spectra of a one-dimensional electron-hole plasma inIn0.53Ga0.47As/InP quantum wires

4. Maskless InP wire formation on planar GaAs substrates

5. Selective growth of InGaAs on nanoscale InP islands

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1. Ion and electron irradiation-induced effects in nanostructured materials;Journal of Applied Physics;2010-04

2. Novel routes in heteroepitaxy and selective area growth for nanophotonics;SPIE Proceedings;2008-02-07

3. Focused Ion Beam Nanopatterning for Optoelectronic Device Fabrication;IEEE Journal of Selected Topics in Quantum Electronics;2005

4. Selective growth of InP on focused-ion-beam-modified GaAs surface by hydride vapor phase epitaxy;Applied Physics Letters;2001-09-17

5. One-dimensional arrays of self-assembled InAs/InP quantum dots;Optoelectronic Materials and Devices II;2000-07-11

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