Vertical barrier layer formation during selective MBE growth of InGaAs ridge quantum wires on InP patterned substrates
Author:
Publisher
Elsevier BV
Subject
Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials
Reference9 articles.
1. Molecular-Beam Epitaxy and Device Applications of III-V Semiconductor Nanowires
2. Observation of Coulomb Blockade Type Conductance Oscillations up to 50 K in Gated InGaAs Ridge Quantum Wires Grown by Molecular Beam Epitaxy on InP Substrates
3. Controlled Formation of Narrow and Uniform InP-Based In0.53Ga0.47As Ridge Quantum Wire Arrays by Selective Molecular Beam Epitaxy
4. InGaAs/InP quantum wires selectively grown by chemical beam epitaxy
Cited by 4 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Epitaxial growth and optical properties of semiconductor quantum wires;Journal of Applied Physics;2006-06-15
2. Molecular beam epitaxy growth mechanism and wire width control for formation of dense networks of narrow InGaAs quantum wires;Microelectronic Engineering;2002-08
3. Structural and Optical Properties of InGaAs Ridge Quantum Wire Arrays with Sub-micron Pitches Grown by Selective MBE on InP Substrates;Japanese Journal of Applied Physics;2002-04-30
4. Improvement of Growth Process to Achieve High Geometrical Uniformity in InGaAs Ridge Quantum Wires Grown by Selective MBE on Patterned InP Substrate;Japanese Journal of Applied Physics;2001-04-30
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