Controlled Formation of Narrow and Uniform InP-Based In0.53Ga0.47As Ridge Quantum Wire Arrays by Selective Molecular Beam Epitaxy
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Cited by 14 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Epitaxial growth and optical properties of semiconductor quantum wires;Journal of Applied Physics;2006-06-15
2. Formation of GaAs wire structures and position-controlled In0.8Ga0.2As quantum dots on SiO2-patterned vicinal (001) GaAs substrates;Nanotechnology;2003-12-15
3. Improved uniformity of self-organized In0.53Ga0.47As/In0.52Al0.48As quantum wires grown on (775)B-oriented InP substrate by molecular beam epitaxy;Journal of Crystal Growth;2003-04
4. Molecular Beam Epitaxy Growth of High-Quality Linear Arrays of InGaAs Ridge Quantum Wires with Nanometer Wire Widths and Submicron Wire Pitches on Patterned InP Substrates;Japanese Journal of Applied Physics;2002-02-28
5. 1.5 μm Range Self-Organized In0.65Ga0.35As/In0.52Al0.48As Quantum Wire Structures Grown on (775)B-Oriented InP Substrates by Molecular Beam Epitaxy;MRS Proceedings;2002
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