Selective area growth of AlGaAs on GaAs by PSE/MBE
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference30 articles.
1. A WSi/TiN/Au Gate Self-Aligned GaAs MESFET with Selectively Grown n+-Layer using MOCVD
2. CBE selective embedded growth for quasi-planar GaAs HBT application
3. Chemical beam epitaxy selectively-regrown n+-GaAs layer on metalorganic chemical vapor deposition grown GaInP/GaInAs/GaAs pseudomorphic high electron mobility transistor structure
4. Optical properties of InGaAs/InP double-heterostructures selectively grown by chemical beam epitaxy
5. GaInAs/InP selective area metalorganic vapor phase epitaxy for one‐step‐grown buried low‐dimensional structures
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1. Nanowire Field-Effect Transistors;Fundamental Properties of Semiconductor Nanowires;2020-11-17
2. Selective area MBE of GaAs, AlAs and their alloys by periodic supply epitaxy;Thin Solid Films;2000-05
3. Fabrication of submicrometer structures by PSE/MBE;Journal of Crystal Growth;2000-04
4. A detailed comparison of the degree of selectivity, morphology and growth mechanisms between PSE/MBE and conventional MBE;Journal of Crystal Growth;1999-03
5. Dependence of the degree of selectivity on the Al content during the selective area growth of AlGaAs on GaAs(001) by PSE/MBE;Journal of Crystal Growth;1998-08
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