A detailed comparison of the degree of selectivity, morphology and growth mechanisms between PSE/MBE and conventional MBE
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference16 articles.
1. Selective epitaxial growth of gallium arsenide by molecular beam epitaxy
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3. Substrate temperature lowering in GaAs selective epitaxial growth by molecular‐beam epitaxy
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5. Selective area two-dimensional electron gas structures and in situ ohmic contacts patterned by focused ion beam doping during molecular beam epitaxial growth
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1. Selectivity Map for Molecular Beam Epitaxy of Advanced III–V Quantum Nanowire Networks;Nano Letters;2018-12-06
2. Control of InGaAs and InAs facets using metal modulation epitaxy;Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena;2015-01
3. AFM analysis of sidewall formation in low angle incidence microchannel epitaxy of GaAs;Journal of Crystal Growth;2000-12
4. Lateral growth in molecular beam epitaxy by low angle incidence microchannel epitaxy;Applied Surface Science;2000-06
5. Selective area MBE of GaAs, AlAs and their alloys by periodic supply epitaxy;Thin Solid Films;2000-05
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