Desorption process of Ga atoms from the mask surface in selective area growth of GaAs by electron-cyclotron-resonance plasma-excited molecular-beam epitaxy (ECR-MBE)
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference4 articles.
1. AIP Conf. Proc. 167;Kondo,1988
2. Selective area growth of GaAs by Electron-Cyclotron Resonance plasma-excited Molecular-Beam Epitaxy (ECR-MBE)
3. GaAs planar technology by molecular beam epitaxy (MBE)
4. Plasma-controlled selective area growth of GaAs by electron-cyclotron resonance plasma-excited molecular-beam epitaxy (ECR-MBE)
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1. Selective Area Masked Growth (Nano to Micro);Handbook of Crystal Growth;2015
2. Selective area MBE of GaAs, AlAs and their alloys by periodic supply epitaxy;Thin Solid Films;2000-05
3. A detailed comparison of the degree of selectivity, morphology and growth mechanisms between PSE/MBE and conventional MBE;Journal of Crystal Growth;1999-03
4. Dependence of the degree of selectivity on the Al content during the selective area growth of AlGaAs on GaAs(001) by PSE/MBE;Journal of Crystal Growth;1998-08
5. Selective Area Growth by Periodic Supply Molecular Beam Epitaxy;Surface Review and Letters;1998-06
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