Selective area two-dimensional electron gas structures and in situ ohmic contacts patterned by focused ion beam doping during molecular beam epitaxial growth-Reference-Cited by-同舟云学术

Selective area two-dimensional electron gas structures and in situ ohmic contacts patterned by focused ion beam doping during molecular beam epitaxial growth

Published:1993-02 Issue:1-4 Volume:127 Page:732-736
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Thompson J.H.,Jones G.A.C.,Ritchie D.A.,Linfield E.H.,Houlton M.,Smith G.W.,Whitehouse C.R.

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference9 articles.

1. Luminescentp‐GaAs grown by zinc ion doped MBE

2. Ionized Mg doping in molecular‐beam epitaxy of GaAs

3. Low‐energy ion doping of GaAs

4. Dopant patterning of MBE GaAs during growth by very low energy focussed tin ion beam deposition

5. Sn Ion Doping during GaAs MBE with Field Ion Gun

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1. Fabrication of submicrometer patterned two-dimensional electron gases by overgrowth of focused ion beam doped Al[sub x]Ga[sub 1−x]As;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;2006

2. Doping Study on Maskless Selective Direct Growth of GaAs Using Low-Energy Focused Ion Beam;Japanese Journal of Applied Physics;2004-05-21

3. Maskless selective direct growth and doping of GaAs using a Ga–Sn low energy focused ion beam for in-situ micro-device structures fabrication;Journal of Crystal Growth;2002-04

4. Selective area MBE of GaAs, AlAs and their alloys by periodic supply epitaxy;Thin Solid Films;2000-05

5. A detailed comparison of the degree of selectivity, morphology and growth mechanisms between PSE/MBE and conventional MBE;Journal of Crystal Growth;1999-03