Fabrication of submicrometer structures by PSE/MBE
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference8 articles.
1. Periodic supply epitaxy: a new approach for the selective area growth of GaAs by molecular beam epitaxy
2. Selective Area Growth by Periodic Supply Molecular Beam Epitaxy
3. A detailed comparison of the degree of selectivity, morphology and growth mechanisms between PSE/MBE and conventional MBE
4. Morphological study of GaAs grown by periodic supply epitaxy on (111) B substrates
5. Selective Growth Conditions of ZnSe/ZnS Heterostructures on (001) GaAs with Metalorganic Molecular Beam Epitaxy
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1. All-epitaxial, laterally structured plasmonic materials;Applied Physics Letters;2022-04-18
2. Selective area epitaxy of GaAs films using patterned graphene on Ge;Applied Physics Letters;2022-01-31
3. Review of lateral epitaxial overgrowth of buried dielectric structures for electronics and photonics;Progress in Quantum Electronics;2021-05
4. High-Quality GaAs Planar Coalescence over Embedded Dielectric Microstructures Using an All-MBE Approach;Crystal Growth & Design;2019-04-10
5. Lateral growth in molecular beam epitaxy by low angle incidence microchannel epitaxy;Applied Surface Science;2000-06
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