Influence of cooling rate on the short-time LPE growth of the active layer in (Al, Ga)As dh lasers
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference20 articles.
1. Isothermal diffusion theory of LPE: GaAs, GaP, bubble garnet
2. Thin-layer liquid phase epitaxy of InGaPAs heterostructures in short intervals (< 100 ms): Non-diffusion-limited crystal growth
3. Analysis of the short-time liquid phase epitaxial growth of AlxGa1-xAs
4. Thickness and surface morphology of GaAs LPE layers grown by supercooling, step-cooling, equilibrium-cooling, and two-phase solution techniques
5. Epitaxial growth of GaAs from thin Ga solution
Cited by 6 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Single and multiple AlGaAs quantum‐well structures grown by liquid‐phase epitaxy;Journal of Applied Physics;1990-09
2. Abrupt heterointerfaces in Al0.35Ga0.65As/Al0.05Ga0.95As/Al0.35Ga0.65As quantum well structure grown by liquid‐phase epitaxy;Journal of Applied Physics;1989-05-15
3. Influence of LPE growth conditions on the physical properties of GaInAsP / InP epilayer;Journal of Crystal Growth;1987-05
4. Inhomogeneity of liquid‐phase‐epitaxial InGaAsP lattice matched on InP: Effects of transient growth;Journal of Applied Physics;1984-09-15
5. Technology of the (Al,Ga)As/GaAs double heterostructure lasers;Czechoslovak Journal of Physics;1984-05
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