Analysis of the short-time liquid phase epitaxial growth of AlxGa1-xAs
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference15 articles.
1. Isothermal diffusion theory of LPE: GaAs, GaP, bubble garnet
2. Comparison of theory and experiment for LPE layer thickness of GaAs and GaAs Alloys
3. Thickness and surface morphology of GaAs LPE layers grown by supercooling, step-cooling, equilibrium-cooling, and two-phase solution techniques
4. An analysis of GaAs LPE growth methods by a diffusion limited growth model
5. Liquid phase epitaxial growth of six-layer GaAs/(GaAl)As structures for injection lasers with 0.04 μm thick centre layer
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1. Liquid Phase Epitaxy of Quantum Wells and Quantum Dots;Liquid Phase Epitaxy of Electronic, Optical and Optoelectronic Materials;2007-09-04
2. Convective mass transfer effect on short-time liquid phase epitaxial growth;The Chemical Engineering Journal and the Biochemical Engineering Journal;1996-04
3. Simulation of the growth rate and layer thickness for liquid phase epitaxy (LPE) under slider-induced convection;Journal of Crystal Growth;1992-07
4. The finite-element analysis of slider-induced convection in two-phase lpe growth system;Microwave and Optical Technology Letters;1992-01
5. Mass transfer rate measurement of short time liquid phase epitaxial growth using an electrochemical method;Journal of Applied Electrochemistry;1991-11
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