Simulation of the growth rate and layer thickness for liquid phase epitaxy (LPE) under slider-induced convection-Reference-Cited by-同舟云学术

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Simulation of the growth rate and layer thickness for liquid phase epitaxy (LPE) under slider-induced convection

Published:1992-07 Issue:3 Volume:121 Page:322-334
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Chen Lai-Juh,Wan Chi-Chao,Lien Chenhsin

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference21 articles.

1. Preparation of High-TcBi-Sr-Ca-Cu-O Films on MgO Substrates by the Liquid Phase Epitaxial (LPE) Method

2. On the growth rate of crystals from solution

3. The distribution of solvent in an unstirred melt under the conditions of crystal growth by liquid epitaxy and its effect on the rate of growth

4. Constitutional supercooling in GaAs liquid phase epitaxy

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Liquid-Phase Epitaxy;Handbook of Crystal Growth;2015

2. Equipment and Instrumentation for Liquid Phase Epitaxy;Liquid Phase Epitaxy of Electronic, Optical and Optoelectronic Materials;2007-09-04

3. Liquid Phase Epitaxy: A Survey of Capabilities, Recent Developments and Specialized Applications;Liquid Phase Epitaxy of Electronic, Optical and Optoelectronic Materials;2007-09-04

4. Convective mass transfer effect on short-time liquid phase epitaxial growth;The Chemical Engineering Journal and the Biochemical Engineering Journal;1996-04

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