Thin-layer liquid phase epitaxy of InGaPAs heterostructures in short intervals (< 100 ms): Non-diffusion-limited crystal growth-Reference-Cited by-同舟云学术

Thin-layer liquid phase epitaxy of InGaPAs heterostructures in short intervals (< 100 ms): Non-diffusion-limited crystal growth

Published:1981-01 Issue:1 Volume:10 Page:255-285
ISSN:0361-5235
Container-title:Journal of Electronic Materials
language:en
Short-container-title:JEM

Author:

Rezek E. A.,Vojak B. A.,Chin R.,Holonyak N.,Sammann E. A.

Publisher

Springer Science and Business Media LLC

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1007/BF02654912.pdf

Reference44 articles.

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3. L. Esaki and L.L. Chang,CRC Critical Reviews in Solid State Science, Vol. 6, Eds. D.E. Schuele and R.W. Hoffman, (CRC Press, Cleveland 1976), pp. 195–208.

4. N. Hlonyak, Jr., R.M. Kolbas, R. D. Dupuis, and P.D. Dapkus, J. Quantum Electron.QE-16, 170 (1980).

5. R. Dingle, H.L. Stornier, A.C. Gossard, and W. Wiegmann, Appl. Phys. Lett.33, 667 (1978).

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