InP on patterned Si(001): defect reduction by application of the necking mechanism
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference16 articles.
1. Selective vapor-phase deposition on patterned substrates
2. Stable cw operation at room temperature of a 1.5‐μm wavelength multiple quantum well laser on a Si substrate
3. Thermal behavior and stability of room‐temperature continuous AlxGa1−xAs‐GaAs quantum well heterostructure lasers grown on Si
4. GaAs‐based diode lasers on Si with increased lifetime obtained by using strained InGaAs active layer
5. GaAs growth properties on V‐grooved Si substrates
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1. Nano-Ridge Engineering of GaSb for the Integration of InAs/GaSb Heterostructures on 300 mm (001) Si;Crystals;2020-04-22
2. Monolithic III/V integration on (001) Si substrate;Metalorganic Vapor Phase Epitaxy (MOVPE);2019-08-30
3. How to control defect formation in monolithic III/V hetero-epitaxy on (100) Si? A critical review on current approaches;Semiconductor Science and Technology;2018-08-17
4. III-V Devices and Technology for CMOS;High Mobility Materials for CMOS Applications;2018
5. Ridge InGaAs/InP multi-quantum-well selective growth in nanoscale trenches on Si (001) substrate;Applied Physics Letters;2016-01-11
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