Evidence for inclusions in rhodium doped molecular beam epitaxy grown GaAs layers-Reference-Cited by-同舟云学术

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Evidence for inclusions in rhodium doped molecular beam epitaxy grown GaAs layers

Published:1989-05 Issue:1 Volume:96 Page:119-126
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Guenais B.,Guivarc'h A.,Chaplain R.,Poudoulec A.,Guillot G.

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference14 articles.

1. The luminescence at 0.795 eV from GaAs:Nb: A Zeeman spectroscopy

2. The influence of Ti and Zr additions on GaAs liquid phase epitaxial growth

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Growth of YbSb2/GaSb(001) and GaSb/YbSb2/GaSb(001) heterostructures by molecular beam epitaxy;Journal of Applied Physics;1993-12

2. Interfacial reactions between rhodium and GaAs in bulk and thin film form;Materials Science and Engineering: B;1992-02

3. Métallurgie du système Rh-Ga-As : détermination du diagramme ternaire et interdiffusion en phase solide dans le contact Rh/GaAs;Revue de Physique Appliquée;1990

4. Growth of matched metallic ErP0.6As0.4layers on GaAs in a molecular beam epitaxy system;Applied Physics Letters;1989-11-27

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