The influence of Ti and Zr additions on GaAs liquid phase epitaxial growth
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.92097
Reference8 articles.
1. Suppression of defect formation in GaAs layers by removing oxygen in LPE
2. Growth of Semi‐Insulating LPE GaAs for FET Buffer Layers
3. Growth and properties of semi‐insulating epitaxial GaAs
4. The effect of baking on the quality of GaAs LPE layers
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1. The dependence of the optical properties on the Ti doping concentration in GaAs epilayers;Applied Surface Science;1999-06
2. Effective Techniques for Reduction of Silicon Impurity in Chloride Vapor Phase Epitaxial Growth of GaInAs;Materials Research Bulletin;1998-02
3. Molecular Beam Epitaxy of High-Quality GaAs and AlGaAs;Molecular Beam Epitaxy;1995
4. Process and device characterization of high voltage gallium arsenide P-i-N layers grown by an improved liquid phase epitaxy method;Solid-State Electronics;1993-12
5. Effective Techniques for Ultra-High Purity Liquid Phase Epitaxial Growth of Ga0.47In0.53As;Japanese Journal of Applied Physics;1992-07-15
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