Effective Techniques for Ultra-High Purity Liquid Phase Epitaxial Growth of Ga0.47In0.53As
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Cited by 7 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. High-purity InAs1-Sb epilayer grown by a LPE technique;Journal of Crystal Growth;2015-04
2. Liquid-Phase Epitaxy;Handbook of Crystal Growth;2015
3. Ultrahigh-Purity Undoped GaAs Epitaxial Layers Prepared by Liquid Phase Epitaxy;Japanese Journal of Applied Physics;2009-12-21
4. Two‐dimensional device modeling and analysis of GaInAs metal–semiconductor–metal photodiode structures;Journal of Applied Physics;1996-08
5. Fe2+-Fe3+level as a recombination center inIn0.53Ga0.47As;Physical Review B;1994-04-15
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