Suppression of defect formation in GaAs layers by removing oxygen in LPE
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.89092
Reference8 articles.
1. Continuous operation of GaAs–Ga1 −xAlxAs double‐heterostructure lasers with 30 °C half‐lives exceeding 1000 h
2. Continuous Operation over 2500 h of Double Heterostructure Laser Diodes with Output Powers More Than 80 mW
3. Reliability of DH GaAs lasers at elevated temperatures
4. Degradation of (Ga·Al)As double heterostructure diode lasers
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1. In situ electrochemical monitoring and control of oxygen in liquid phase epitaxial growth of GaAs;Journal of Crystal Growth;1983-08
2. Applications Of Semiconductor Lasers In Space Communications;Optical Engineering;1983-04-01
3. Recent Developments in Fiber Optic Devices;IEEE Transactions on Microwave Theory and Techniques;1982-02
4. Effects of Ga(As,Sb) active layers and substrate dislocation density on the reliability of 0.87‐μm (Al,Ga)As lasers;Journal of Applied Physics;1982-01
5. The influence of Ti and Zr additions on GaAs liquid phase epitaxial growth;Applied Physics Letters;1980-11
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