Interfacial reactions between rhodium and GaAs in bulk and thin film form-Reference-Cited by-同舟云学术

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Interfacial reactions between rhodium and GaAs in bulk and thin film form

Published:1992-02 Issue:3 Volume:12 Page:223-235
ISSN:0921-5107
Container-title:Materials Science and Engineering: B
language:en
Short-container-title:Materials Science and Engineering: B

Author:

Schulz K.J.,Chang Y.A.

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference36 articles.

1. Reactions of Pd on (100) and (110) GaAs surfaces

2. Initial stages of the Pd-GaAs reaction: Formation and decomposition of ternary phases

3. Ni, Pd, and Pt on GaAs: A comparative study of interfacial structures, compositions, and reacted film morphologies

4. A comparative study of phase stability and film morphology in thin‐film M/GaAs systems (M=Co, Rh, Ir, Ni, Pd, and Pt)

5. Reaction of sputtered Pt films on GaAs

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Characterization of the ternary phase at the Sn/Ni–V joint;Journal of Materials Research;2008-10

2. The Sn/Ni-7Wt.%V interfacial reactions;Journal of Electronic Materials;2006-09

3. Electric current effects upon the Sn/Cu and Sn/Ni interfacial reactions;Journal of Electronic Materials;1998-11

4. Phase equilibria in the InRhAs system at 600 °C;Journal of Alloys and Compounds;1994-12

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