Growth of matched metallic ErP0.6As0.4layers on GaAs in a molecular beam epitaxy system
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.102043
Reference18 articles.
1. (Invited) Epitaxial Silicide Films for Integrated Circuits and Future Devices
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3. Negative differential resistance in AlAs/NiAl/AlAs heterostructures: Evidence for size quantization in metals
4. Epitaxial, thermodynamically stabilised metal/III-V compound semiconductor interface: NiGa on GaAs (001)
5. Growth of Ni3Ga2, NiGa and Ni2Ga3 on GaAs (001) and (111) in a molecular beam epitaxy system
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