Calculation of III-III-V-V quaternary layer thickness grown by liquid phase epitaxy - application to InGaAsP
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference37 articles.
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1. A theoretical approach to the In1-xGaxP LPE growth by computer simulation technique;Physica Status Solidi (a);1996-07-16
2. Simulation studies of liquid phase epitaxial growth of In1 −xGaxAs;Materials Science and Engineering: B;1996-06
3. Liquid phase epitaxy growth of InGaAs with rare-earth gettering: Characterization and deep level transient spectroscopy studies;Journal of Electronic Materials;1995-07
4. Calculation of the compositional variation-slope of In1-xGaxAs grown from In-Ga-As solution by ramp-cooling;Journal of Crystal Growth;1991-12
5. Calculation of composition variation of In1−vGavAs ternary crystals for diffusion and electromigration limited growth from a temperature graded solution with source material;Journal of Crystal Growth;1991-04
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