Calculation of the compositional variation-slope of In1-xGaxAs grown from In-Ga-As solution by ramp-cooling
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference27 articles.
1. The application of numerical methods to simulate the liquid phase epitaxial growth of Ga1 −xAlxAs from an unstirred solution
2. Growth of GaxIn1-xSb liquid phase epitaxial layers from a knowledge of the ternary phase diagram
3. Liquid phase epitaxial growth of six-layer GaAs/(GaAl)As structures for injection lasers with 0.04 μm thick centre layer
4. Variation of Solid Composition and Thickness during LPE Growth of Al x Ga1 − x As
5. Computer simulations of liquid phase epitaxy of III-V ternary alloys
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1. Growth of InGaAs ternary bulk crystals by rotational Bridgman method;Journal of Crystal Growth;2005-02
2. Growth of InGaAs and SiGe homogeneous bulk crystals which have complete miscibility in the phase diagrams;International Journal of Materials and Product Technology;2005
3. Study of the formation mechanism of InGaAs pyramidal layers on GaAs(100) patterned substrates by LPE;Semiconductor Science and Technology;2002-06-18
4. Influence of indium on the morphology of LPE grown InxGa1-xAs (x=0-0.06) epilayers on patterned GaAs(100) substrates;Journal of Materials Science Letters;2002
5. Growth of InxGa1−xAs bulk mixed crystals with a uniform composition by the rotational Bridgman method;Journal of Crystal Growth;2001-07
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