Liquid phase epitaxial growth of six-layer GaAs/(GaAl)As structures for injection lasers with 0.04 μm thick centre layer-Reference-Cited by-同舟云学术

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Liquid phase epitaxial growth of six-layer GaAs/(GaAl)As structures for injection lasers with 0.04 μm thick centre layer

Published:1974-12 Issue: Volume:27 Page:70-85
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:
Short-container-title:

Author:

Thompson G

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Cited by 22 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Calculation of the compositional variation-slope of In1-xGaxAs grown from In-Ga-As solution by ramp-cooling;Journal of Crystal Growth;1991-12

2. Calculation of composition variation of In1−vGavAs ternary crystals for diffusion and electromigration limited growth from a temperature graded solution with source material;Journal of Crystal Growth;1991-04

3. Layer thickness calculation of In1−vGavAs grown by the source-current-controlled method — Diffusion and electromigration limited growth;Journal of Crystal Growth;1989-11

4. Compositional Variation Related to the Growth Process in GaAlAs Epitaxial Layers;Journal of The Electrochemical Society;1988-04-01

5. Thickness control of Ga1−xAlxAs layers grown by liquid phase epitaxy at low growth temperature;Journal of Crystal Growth;1987-11

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