InAlAs/InGaAs/InP sub-micron HEMTs grown by CBE
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference9 articles.
1. 0.33- mu m gate-length millimeter-wave InP-channel HEMTs with high f/sub 1/ and f/sub max/
2. Growth of high quality AlGaAs by metalorganic molecular beam epitaxy using trimethylamine alane
3. Private conversation with Jim Cerny (Intevac).
4. Growth of high quality AlInAs by low pressure organometallic chemical vapor deposition for high speed and optoelectronic device applications
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1. New Submicron Low Gate Leakage In0.52Al0.48As-In0.7Ga0.3As pHEMT for Low-Noise Applications;Micromachines;2021-11-30
2. Compound semiconductor growth by metallorganic molecular beam epitaxy (MOMBE);Materials Science and Engineering: R: Reports;1995-05
3. Influence of hydride purity on InP and InAlAs grown by chemical beam epitaxy;Journal of Crystal Growth;1994-03
4. The growth of resonant tunneling hot electron transistors using chemical beam epitaxy;Journal of Crystal Growth;1994-03
5. Parametric investigation of InGaAs/InAlAs HEMTs grown by CBE;Journal of Crystal Growth;1993-02
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