The growth of resonant tunneling hot electron transistors using chemical beam epitaxy
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference10 articles.
1. Advances in MOVPE, MBE, and CBE
2. Very low threshold single quantum well graded‐index separate confinement heterostructure InGaAs/InGaAsP lasers grown by chemical beam epitaxy
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4. Growth of GaAs/AlGaAs HBTs by MOMBE (CBE)
5. InAlAs/InGaAs/InP sub-micron HEMTs grown by CBE
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2. Tunneling devices and applications in high functionality/speed digital circuits;Solid-State Electronics;1997-10
3. Atomic Spectrometry Update—Atomic Mass Spectrometry and X-Ray Fluorescence Spectrometry;J. Anal. At. Spectrom.;1995
4. Atomic Spectrometry Updates—References;J. Anal. At. Spectrom.;1995
5. Influence of hydride purity on InP and InAlAs grown by chemical beam epitaxy;Journal of Crystal Growth;1994-03
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