Growth of highly uniform InP/GaInAs/GaInAsP heterostructures by MOMBE for device integration
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference19 articles.
1. The growth of GaAs, AIGaAs, InP and InGaAs by chemical beam epitaxy using group III and V alkyls
2. Chemical beam epitaxy of indium phosphide
3. Growth of high purity InP by metalorganic MBE (CBE)
4. Growth of high‐quality GaxIn1−xAsyP1−yby chemical beam epitaxy
5. Incorporation of group III and group V elements in chemical beam epitaxy of GaInAsP alloys
Cited by 33 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. MOMBE: superior epitaxial growth for InP-based monolithically integrated photonic circuits;Journal of Crystal Growth;2000-02
2. Metalorganic molecular beam epitaxial growth of semi-insulating GaInAsP(λg=1.05 μm):Fe optical waveguides for integrated photonic devices;Applied Physics Letters;1998-06-08
3. Element incorporation in GaInAsP for uniform large area MOMBE;Journal of Crystal Growth;1998-06
4. Potential of MOMBE/CBE for the production of photonic devices in comparison with MOVPE;Journal of Crystal Growth;1998-06
5. Full gaseous source growth of separate confinement MQW 1.55 μm laser structures in a production MOMBE;Journal of Crystal Growth;1997-05
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