Metalorganic molecular beam epitaxial growth of semi-insulating GaInAsP(λg=1.05 μm):Fe optical waveguides for integrated photonic devices
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.121537
Reference8 articles.
1. Heterodyne receiver PICs as the first monolithically integrated tunable receivers for OFDM system applications
2. Selective area growth of III/V materials in metalorganic molecular beam epitaxy (chemical beam epitaxy)
3. Selective area chemical beam epitaxy for butt-coupling integration
4. Metalorganic molecular beam epitaxy of strained multi-quantum-wells for 1.3 μm wavelength laser diodes
5. Growth of highly uniform InP/GaInAs/GaInAsP heterostructures by MOMBE for device integration
Cited by 1 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. MOMBE: superior epitaxial growth for InP-based monolithically integrated photonic circuits;Journal of Crystal Growth;2000-02
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