The impact of impurity incorporation on heterojunction bipolar transistors grown by metalorganic molecular beam epitaxy-Reference-Cited by-同舟云学术

The impact of impurity incorporation on heterojunction bipolar transistors grown by metalorganic molecular beam epitaxy

Published:1994-03 Issue:1-4 Volume:136 Page:11-17
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Abernathy C.R.,Ren F.,Pearton S.J.,Wisk P.W.,Bohling D.A.,Muhr G.T.,Jones A.C.,Stavola M.,Kozuch D.M.

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference26 articles.

1. Novel carbon‐dopedp‐channel GaAs metal‐semiconductor field‐effect transistor grown by metalorganic molecular beam epitaxy

2. Carbon and tin doped npn and pnp AlGaAs/GaAs HBTs grown by MOMBE

3. Metallic p-type GaAs and InGaAs grown by MOMBE

4. Carbon doping of III–V compounds grown by MOMBE

5. Characterization ofp‐type GaAs heavily doped with carbon grown by metalorganic molecular‐beam epitaxy

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