Metallic p-type GaAs and InGaAs grown by MOMBE-Reference-Cited by-同舟云学术

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Metallic p-type GaAs and InGaAs grown by MOMBE

Published:1990-10 Issue:1-4 Volume:105 Page:359-365
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Konagai Makoto,Yamada Takumi,Akatsuka Takeshi,Nozaki Shinji,Miyake Ryuji,Saito Koki,Fukamachi Taichi,Tokumitsu Eisuke,Takahashi Kiyoshi

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference12 articles.

1. Ultra-high doping levels of GaAs with beryllium by molecular beam epitaxy

2. Ultrahigh Be doping of Ga0.47In0.53As by low‐temperature molecular beam epitaxy

3. Surface effect‐induced fast Be diffusion in heavily doped GaAs grown by molecular‐beam epitaxy

4. Heavily carbon doped p-type GaAs and GaAlAs grown by metalorganic molecular beam epitaxy

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1. GaAs quantum dot/TiO2 heterojunction for visible-light photocatalytic hydrogen evolution: promotion of oxygen vacancy;Advanced Composites and Hybrid Materials;2021-07-18

2. Molecular Beam Epitaxy with Gaseous Sources;Handbook of Crystal Growth;2015

3. Growth of highly tensile-strained Ge on relaxed InxGa1−xAs by metal-organic chemical vapor deposition;Journal of Applied Physics;2008-10-15

4. Influence of lattice mismatch on hydrogen incorporation into C-doped In0.53Ga0.47As grown by metalorganic chemical vapor deposition;Journal of Crystal Growth;2002-03

5. Chemical Beam Epitaxy;Encyclopedia of Materials: Science and Technology;2001

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