Pseudomorphic bidimensional electron gas grown by chemical beam epitaxy
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference11 articles.
1. Pseudomorphic InGaAs high electron mobility transistors
2. Effect of high strain on noise characteristics in InAIAs/InGaAs pseudomorphic HEMT
3. Double-heterojunction lattice-matched and pseudomorphic InGaAs HEMT with delta -doped InP supply layers and p-InP barrier enhancement layer grown by LP-MOVPE
4. Growth investigations of 1.3 μm GaInAsP/InP MQW laser diodes grown by chemical beam epitaxy
5. PhD Thesis #1181;Carlin,1993
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1. Hybrid epitaxy technique for the growth of high-quality AlInAs and GaInAs layers on InP substrates;Journal of Vacuum Science & Technology B;2019-05
2. Competition betweenh/eandh/2eoscillations in a semiconductor Aharonov–Bohm interferometer;New Journal of Physics;2008-07-16
3. Doping optimizations for InGaAs/InP composite channel HEMTs;Journal of Crystal Growth;1998-12
4. Low threshold 1.55 μm wavelength InAsP/InGaAsP strained multiquantum well laser diode grown by chemical beam epitaxy;Applied Physics Letters;1997-07-07
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