Growth investigations of 1.3 μm GaInAsP/InP MQW laser diodes grown by chemical beam epitaxy
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference9 articles.
1. CBE growth of low threshold 1.5 μm InGaAs/InGaAsP MQW lasers
2. 1.3 μm InGaAsP/InP multiquantum well buried heterostructure lasers grown by chemical‐beam epitaxy
3. Metalorganic molecular beam epitaxy of 1.3 μm quaternary layers and heterostructure lasers
4. In0.53Ga0.47As/InP Multiquantum Well Lasers Grown by Metalorganic Molecular Beam Epitaxy (MOMBE)
5. Strained multiple quantum well lasers emitting at 1.3 μm grown by low‐pressure metalorganic vapor phase epitaxy
Cited by 7 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Full gaseous source growth of separate confinement MQW 1.55 μm laser structures in a production MOMBE;Journal of Crystal Growth;1997-05
2. Pseudomorphic bidimensional electron gas grown by chemical beam epitaxy;Journal of Crystal Growth;1996-07
3. Chemical beam epitaxy of 1.55-um separate confinement heterostructure multiple quantum well laser diodes;Optical Engineering;1995-07-01
4. Chemical beam epitaxy growth of 1.3 μm InGaAsP/InP double heterostructure lasers using all gas source doping;Applied Physics Letters;1994-08-22
5. Advances in the understanding of chemical beam epitaxy growth mechanisms;Journal of Crystal Growth;1994-03
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