In-situ observations of growths of Si and Ge on metal-adsorbed Si(111) surfaces by REM-RHEED
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference14 articles.
1. GROWTH OF Ge ON In-ADSORBED Si(111) SURFACES STUDIED BY UHV-REM
2. Growth of Si on Si(111)-In surfaces studied by UHV-REM
3. REM studies of surface dynamics: growth of Ge on Au-deposited Si(111) surfaces
4. Growth of Si on Au deposited Si(111) surfaces studied by UHV-REM
5. Surfactants in epitaxial growth
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1. In Situ Transmission Electron Microscopy;Springer Handbook of Microscopy;2019
2. Structural Characterization of Quantum Dots;Encyclopedia of Materials: Science and Technology;2007
3. Nanometer-scale Si selective epitaxial growth on Au-adsorbed Si(111) surface windows in ultrathin oxide films;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;2000
4. Photoinduced Reaction of Digermane with Si(111);The Journal of Physical Chemistry A;1999-11-18
5. Dynamics of Au-adsorption-induced step bunching on a Si(001) vicinal surface studied by reflection electron microscopy;Physical Review B;1999-07-15
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