GROWTH OF Ge ON In-ADSORBED Si(111) SURFACES STUDIED BY UHV-REM

Abstract

Growth of Ge on In-adsorbed Si (111)[Formula: see text] and 4×1 surfaces was studied by REM-RHEED. Indium atoms were segregated to the topmost surface during Ge deposition. The formation of the 1×1 structure, which is one of the In-adsorbed structures on the Ge (111) surface, was observed on both the [Formula: see text] structure and the 4×1 surface structures. Suppression of two- and three-dimensional island nucleation of Ge by In predeposition was noticed below 430°C on both surface structures. The critical thickness at which the layer growth mode changed to the island growth mode on the 4×1 surface structure was larger than that on the [Formula: see text] surface structure. Apparent surface diffusion lengths of Ge changed after 2 ML deposition of Ge on the [Formula: see text] surface structure.