In situ REM observations of surfactant-mediated epitaxy: growth of Ge on Si(111) surfaces mediated by Bi
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics
Reference18 articles.
1. Surfactants in epitaxial growth
2. Influence of surfactants in Ge and Si epitaxy on Si(001)
3. Modification of growth kinetics in surfactant-mediated epitaxy
4. Growth of Si on Si(111)-In surfaces studied by UHV-REM
5. Scanning tunneling microscopy of surfactant-mediated epitaxy of Ge on Si(111): strain relief mechanisms and growth kinetics
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1. In Situ Reflection Electron Microscopy for the Analysis of Silicon Surface Processes: Sublimation, Electromigration, and Adsorption of Impurity Atoms;Crystallography Reports;2021-07
2. In adsorption on Si(112) and its impact on Ge growth;IBM Journal of Research and Development;2011-07
3. Influence of Bi impurity as a surfactant during the growth of GaN by metalorganic vapor phase epitaxy;Journal of Crystal Growth;2002-07
4. The Surfactant Effect in Semiconductor Thin-Film Growth;Solid State Physics;2000
5. Scanning tunnelling microscopy studies of silicides;Journal of Physics D: Applied Physics;1999-07-26
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