Initial stage of GaPSi heteroepitaxial growth by metalorganic chemical vapor deposition
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference15 articles.
1. Low‐threshold continuous‐wave room‐temperature operation of AlxGa1−xAs/GaAs single quantum well lasers grown by metalorganic chemical vapor deposition on Si substrates with SiO2back coating
2. High Efficiency GaAs/Si Monolithic Three-Terminal Cascade Solar Cells Grown by Metal-Organic Chemical Vapor Deposition
3. Initial stage of epitaxial growth at the high temperature of GaAs and AlGaAs on Si by metalorganic chemical vapor deposition
4. The effects of the growth parameters on the initial stage of epitaxial growth of GaP on Si by metalorganic chemical vapor deposition
5. Initial Growth Mechanism for GaAs and GaP on Si Substrate by Metalorganic Chemical Vapor Deposition
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